Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation

Product Details
Customization: Available
After-sales Service: on-Line Service
Warranty: One Year
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Year of Establishment
2025-04-22
Registered Capital
1.48 Million USD
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
  • Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
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Basic Info.

Model NO.
Made-to-order
Type
Vacuum Coating
Coating
Vacuum Coating
Substrate
Steel
Certification
CE
Condition
New
Transport Package
Wooden Case
Specification
Customized
Trademark
RJ
Origin
Zhengzhou, China

Product Description

Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample PreparationPlasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample PreparationPlasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation
This system consists of a 150W RF power supply, a single-zone tube furnace, a 3-channel mass flow controller (MFC) system, and a high-performance vacuum pump.
Feature Specification
Structural Characteristics The 150W RF power supply enables plasma enhancement, significantly reducing experimental temperatures.
  • The 3-channel mass flow controller (MFC) system allows precise gas flow adjustment.
Power Supply  AC 208-220V, 50/60Hz
   Total power: 4KW
Single-Zone Tube Furnace  Max temperature: 1100°C (< 2h); Continuous working temperature: 1000°C
   PID temperature controller with 30-segment programmable remote control system
   Input power: 220V, single-phase, 1.5KW
   Heating zone length: 200mm; Uniform temperature zone: 100mm
   Openable furnace design for rapid cooling and easy tube replacement
Plasma RF Power Supply  Output power: 0-150W adjustable (±1% stability)
   RF frequency: 13.56MHz (±0.005% stability)
   Max reflected power: 150W
   Matching: Manual tuning
   RF output port: 50Ω, N-type connector
   Noise: < 50dB
   Cooling: Air-cooled
   Current: 220V AC, 50/60Hz
Quartz Tube  High-purity quartz tube
   Dimensions: φ50mm × 1200mm (L)
Sealing Flanges  Pair of stainless steel quick-connect flanges (equipped with KF25 vacuum fittings)
Vacuum Pump (Optional, billed separately)  Dual-stage vacuum pump
   KF16 flange & bellows for connecting the tube furnace to the pump
8-Channel Mass Flow Controller System (Optional, billed separately)  4-channel MFC system for precise gas flow control (Accuracy: ±0.02%)
   Flow ranges:
  - Channel 1: 0-100 SCCM
  - Channel 2: 0-200 SCCM
  - Channel 3: 1-200 SCCM
   Voltage: 220V AC, 50/60Hz
   Gas fittings: 6.35mm stainless steel tubing
   Stainless steel needle valve for manual gas flow control
Dimensions & Weight  1400mm (L) × 600mm (W) × 1240mm (H)
   Net weight: 90kg
Warranty  1-year warranty, lifetime maintenance (excludes consumables like quartz tubes, O-rings, heating elements)
Certification  CE certified
Usage Notes  Tube pressure must not exceed 0.02MPa
   A pressure reducer must be installed on gas cylinders due to high internal pressure.
   When furnace temperature >1000°C, the tube must not be under vacuum; internal pressure should match atmospheric pressure.
   Gas flow into the tube must be <200 SCCM to avoid thermal shock from cold gas flow.
   Long-term quartz tube use temperature <1100°C.
   For sample heating experiments, avoid closing the pump/vent valves on the flanges. If valves are closed, monitor pressure gauges closely; immediately open the vent valve if pressure exceeds 0.02MPa.
Plasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample PreparationPlasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample PreparationPlasma-Enhanced CVD Coating Machine for Metallic Thin Film Deposition and Laboratory Sem Sample Preparation

Plasma-Enhanced CVD System

The Plasma-Enhanced CVD (PECVD) system consists of a plasma generator, a three-zone tube furnace, a single-zone tube furnace, an RF power supply, and a vacuum system.

To enable chemical reactions at lower temperatures, this system utilizes the high reactivity of plasma to facilitate deposition. Hence, this method is referred to as Plasma-Enhanced Chemical Vapor Deposition (PECVD).

This PECVD graphene thin-film deposition system employs 13.56 MHz RF power to ionize precursor gases containing thin-film constituent atoms, generating plasma within the vacuum chamber. By leveraging the strong chemical activity of plasma, the system optimizes reaction conditions and enhances deposition kinetics, enabling the formation of high-quality thin films on substrates.

Application Scope of Plasma-Enhanced CVD System

The Plasma-Enhanced CVD (PECVD) system is suitable for various experimental applications including:

  • Graphene synthesis

  • Sulfide preparation

  • Nanomaterial fabrication

This system can deposit multiple thin film types on flat or similarly shaped substrates, such as:

  • SiOx and SiNx films

  • Amorphous silicon, microcrystalline silicon, and nanocrystalline silicon

  • SiC and diamond-like carbon (DLC) films

  • Both p-type and n-type doped films

The deposited films exhibit superior characteristics including:

  • Excellent uniformity

  • High density

  • Strong adhesion

  • Outstanding insulating properties

Widely applied in industrial fields such as:

  • Cutting tools and precision molds (for wear-resistant coatings)

  • Hard coatings (for enhanced durability)

  • High-end decorative finishes

The system demonstrates particular advantages in applications requiring:

  • Low-temperature deposition processes

  • Precise film composition control

  • High-quality thin film production
     

    Plasma-Enhanced CVD System Technical Specifications:

    Three-Zone Tube Furnace Specification
    ModelRJ RJ-PECVD50R-1200-Q
    Tube Material High-purity quartz
    Tube Diameter 50mm
    Tube Length 2830mm
    Furnace Length 660mm
    Heating Zone Length 200mm+200mm+200mm
    Operating Temperature 0~1100°C
    Temperature Accuracy ±1°C
    Temperature Control Mode 30/50-segment programmable
    Display Mode LCD
    Sealing Method 304 stainless steel vacuum flange
    Flange Interface 1/4" ferrule fitting, KF16/25/40 flange
    Achievable Vacuum 4.4E-3Pa
    Power Supply AC220V 50/60Hz
    Single-Zone Tube Furnace Specification
    Model RJ-O1200-50IT
    Tube Material High-purity quartz
    Tube Diameter 50mm
    Tube Length 2830mm
    Furnace Length 440mm
    Heating Zone Length 400mm
    Uniform Temperature Zone 200mm
    Operating Temperature 0~1100°C
    Temperature Accuracy ±1°C
    Temperature Control Mode 30/50-segment programmable
    Display Mode LCD
    Sealing Method 304 stainless steel vacuum flange
    Flange Interface 1/4" ferrule fitting, KF16/25/40 flange
    Achievable Vacuum 4.4E-3Pa
    Power Supply AC220V 50/60Hz
    RF Output System Specification
    Operating Frequency 13.56MHz ±0.005%
    Operation Mode Continuous output
    Display Mode LCD
    Impedance Matching Capable of uniform plasma distribution across three zones
    Power Stability ≤2W
    Normal Reflected Power ≤3W
    Maximum Reflected Power ≤70W
    Harmonic Distortion ≤-50dBc
    System Efficiency ≥70%
    Power Factor ≥90%
    Power Supply Single-phase AC (187V-253V) 50/60Hz
    Control Mode Internal/PLC control, analog/RS232/485 communication
    Protection Features DC overcurrent, amplifier overcurrent, reflected power protection
    Cooling Method Forced air cooling
    Mass Flow Controller System Specification
    MFC1 Range 0-200sccm (H)
    MFC2 Range 0-200sccm (CH)
    MFC3 Range 0-500sccm (N)
    MFC4 Range 0-500sccm (Ar)
    Accuracy ±1.5% F.S.
    Repeatability ±0.2% F.S.
    Linearity ±1% F.S.
    Response Time ≤4s
    Operating Pressure -0.15MPa ~ 0.15MPa
    Flow Control Touchscreen LCD, digital display, individual needle valves
    Gas Inlet 1/4" NPS or 6mm OD stainless tube
    Gas Outlet 1/4" NPS or 6mm OD stainless tube
    Connection Double ferrule fitting
    Operating Temperature 5~45°C
    Gas Mixing Equipped with gas mixing chamber
    Power Supply AC220V 50/60Hz
    Vacuum System Specification
    Mechanical Pump Rotary vane pump
    Pumping Speed 1.1L/s
    Exhaust Port KF16
    Vacuum Measurement Pirani gauge
    Ultimate Vacuum 1.0E-1Pa
    Power Supply AC220V 50/60Hz
    Pumping Port KF16

     
    Additional Features Specification
    Rail System 3m length, enables sliding of three-zone furnace for rapid heating/cooling

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