Advanced Crystal Growth Furnace with High-Temperature Crucible Tube Technology

• Customization: Available
• After-sales Service: on-Line Service
• Warranty: One Year
• Model NO.: RJ1700-100T2F
• Application: Industry, School, Hospital, Lab
• Customized: Customized
• Certification: CE
• Structure: Portable
• Material: Steel
• Type: Tubular Furnace
• Max Temperature: 1650°c (Short-Term), 1600°c (Continuous)
• Power Supply: AC380V, 50Hz, 9.5kw
• Crucible Tube: Φ100×1300 mm (99% Al2O3, <1700°c)
• Furnace Movement: 300 mm Travel, 0.03–6000 mm/H Speed
• Transport Package: Wooden Case
• Specification: Customized
• Trademark: RJ
• Origin: Zhengzhou, China

Product Description

Bridgman Crystal Growth Furnace
Model: RJ1700-100T2F
Overview
A high-precision furnace designed for single-crystal growth of semiconductors, metals, and ceramics using the Bridgman (vertical gradient freeze) method. Combines crucible descent, furnace movement, and rotation pulling technologies to enhance crystal quality and uniformity.

 

Key Features

1. Precision Control
   • PID temperature control (±1°C accuracy) with programmable multi-segment profiles.
   • Servo-driven mechanics for smooth crucible descent (0.03-6000 mm/h) and rotation.
2. Optimized Thermal Gradient
   • Dual heating zones (100+100 mm) with silicon molybdenum (MoSi2) heating elements (Tmax: 1650°C).
   • Ideal temperature gradient for defect-free crystal growth.
3. Automation & Monitoring
   • Touchscreen/PC interface for real-time control of temperature, speed, and rotation.
   • Data logging (temperature, position, RPM) and analysis software.
4. Versatile Configurations
   • Works under vacuum or protective atmospheres (sealed with stainless steel flanges).
   • Graphite sample stage (Φ80 mm) with embedded B-type thermocouple.

 

Technical Specifications

Parameter	Value
Max Temperature	1650°C (short-term), 1600°C (continuous)
Power Supply	AC380V, 50Hz, 9.5KW
Crucible Tube	Φ100×1300 mm (99% Al2O3, <1700°C)
Furnace Movement	300 mm travel, 0.03-6000 mm/h speed
Atmosphere Options	Vacuum/inert gas (N2, Ar)
Weight	~700 kg

 

Applications

• Semiconductors: GaAs, SiC, CdTe crystal growth.
• Metallurgy: High-purity alloy solidification.
• Ceramics: Oxide single crystals (e.g., YAG).

 

Safety & Maintenance

• Do not open above 300°C.
• Vacuum limit: ≤800°C; for >1000°C, maintain atmospheric pressure.
• Annual maintenance recommended (excludes consumables like O-rings).

 

Support

• 1-year warranty (excludes wear parts).
• Lifetime technical assistance.