Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

Product Details
Customization: Available
After-sales Service: on-Line Service
Warranty: One Year
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Year of Establishment
2025-04-22
Registered Capital
1.48 Million USD
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
  • Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
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Basic Info.

Model NO.
Made-to-order
Application
Industry, School, Hospital, Lab
Customized
Customized
Certification
CE
Structure
Portable
Material
Steel
Type
Tubular Furnace
Transport Package
Wooden Case
Specification
Customized
Trademark
RJ
Origin
Zhengzhou, China

Product Description

Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

Equipment Introduction

The RJ150-XK is a tubular diffusion/oxidation furnace designed for R&D applications in enterprises, universities, and research institutes. It supports a variety of processes including:

  • Polysilicon and silicon nitride deposition

  • Diffusion

  • Oxidation

  • Annealing

Key Features:

  • Versatile processing for advanced material research

  • Precision temperature control for consistent results

  • Compact design optimized for lab environments
    Product Features:  

    1. Capable of accommodating processes such as polysilicon, silicon nitride, diffusion, oxidation, annealing, and more.  
    2. Utilizes a highly reliable industrial computer + PLC system to achieve fully automated control over furnace temperature, boat movement, gas flow, and valves, enabling complete automation of the entire process.  
    3. Features a user-friendly human-machine interface, allowing easy modification of process control parameters and real-time display of various process statuses.  
    4. Offers multiple process pipelines for convenient user selection.  
    5. Equipped with powerful software functionality, including self-diagnostic tools to significantly reduce maintenance time.  
    6. Automatic adjustment of the constant temperature zone and cascade control ensure precise regulation of the actual process temperature in the reaction tube.  
    7. Includes alarms and protective functions for over-temperature, thermocouple breakage, thermocouple short circuits, and deviations in process gas flow.  
    8. Customizable products available based on customer requirements.

Technical Specifications

Model KJ150-XK
Operating Temperature ≤1300ºC
Wafer Size 2~8 inches (round wafers)
Number of Process Tubes 1~2 tubes per unit
Constant Temperature Zone Length 300~600mm
Constant Temperature Zone Accuracy ≤±0.5ºC
Temperature Stability ≤±0.5ºC/24h
Temperature Ramp Rate Max heating rate: 10ºC/min, Max cooling rate: 5ºC/min
Safety Alarms & Protections Over-temperature, thermocouple breakage, thermocouple short circuit, and process gas flow deviation alarms and protection functions

The **RJ-1200T-V50** is a **vertical fluidized bed CVD system** specifically designed for **powder surface deposition experiments**. The furnace features an **openable design**-after the experiment, the furnace body can be opened to remove the quartz tube and retrieve the processed particles.  

Inside the furnace tube, a **0.2mm porous quartz plate** (with customizable pore size) is installed. The powder is placed on this porous plate, and gas is introduced from the **bottom of the tube**. As the gas flows through the porous plate, it **fluidizes the sample particles**, suspending them in the heating zone for deposition.  

**Note:** When fluidizing the particles, excessive gas flow may cause them to **escape the heating zone**. Therefore, the gas flow rate should be adjusted according to the **particle size** during experiments.Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

Technical Specifications

Parameter Specification
Heating Zone Length 400mm
Furnace Tube Dimensions Diameter: 50mm, Length: 900mm
Furnace Tube Material High-purity quartz tube with built-in 0.2mm porous quartz plate (customizable)
Operating Temperature ≤1100°C
Maximum Temperature 1200°C
Temperature Sensor Type N thermocouple
Temperature Control Intelligent 30-segment PID programmable microcomputer control with auto-tuning
Temperature Accuracy ±1°C
Temperature Protection Over-temperature and thermocouple breakage protection
Heating Rate 0-20°C/min
Heating Element Alloy resistance wire
Operating Voltage AC220V, single-phase, 50Hz
Maximum Power 3KW
Furnace Chamber Material Polycrystalline fiber lining with excellent insulation, high reflectivity, and uniform temperature distribution
Flange Stainless steel vacuum flange, easy to disassemble
Sealing System O-ring compression seal between furnace tube and flange, reusable, high airtightness
Fluidization Zone 1. Reaction gas uniformly passes through the reaction zone.
2. Solid particles are fluidized by gas in the heating zone.
3. Openable furnace design allows easy removal of quartz tube and processed particles after experiments.
Note Excessive gas flow may cause particles to escape the heating zone. Adjust gas flow according to particle size.
Shell Structure Double-layer shell with air-cooling system, openable design
Furnace Structure Vertical structure
Parameter Specification
Internal Temperature ≤45ºC
Measurement & Control Devices  
Name Dual-channel Mass Flow Controller (MFC)
Gas Channels 2 channels
Flow Control Digital display, each gas line with independent needle valve control
Connection Method Double ferrule fitting
Flow Meter Mass flow meter
Flow Range MFC1: N 0-10 SLM
MFC2: CO 0-10 SLM
Gas Mixing Equipped with a precision gas mixing chamber
Power Supply 220V, 50Hz
Operating Ambient Temp. 5ºC~45ºC
Standard Accessories Main unit ×1, high-seal flanges ×1 pair, quartz tube ×1, sealing rings ×4,
high-temperature gloves ×1 pair, crucible hook ×1,
hex wrench for flange disassembly ×1, warranty card & manual ×1 set
Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

Equipment Introduction

The vertical dual-zone CVD system primarily consists of:

  • A 1200°C dual-zone tube furnace

  • A 3-channel mass flow controller (MFC) gas supply system

  • A 2L/s vacuum pump with related connecting components

The system is equipped with directional and swivel casters at the base, ensuring compact footprint and flexible mobility.

Designed for CVD processes, this system is ideal for universities, research centers, and industrial manufacturers conducting experiments and production involving chemical vapor deposition.

(Note: Structured for clarity while maintaining technical accuracy and natural English flow.)

Fluidized Bed Tube Furnace Specifications

Parameter Specification
Maximum Temperature 1200°C
Operating Temperature ≤1100°C
Display LCD touch screen
Tube Diameter 40mm (OD)
Tube Material Custom high-purity quartz tube
Furnace Tube Length Approx. 1100mm (customizable)
Heating Element Premium heating wire
Heating Rate 0-10°C/min
Temperature Control - Programmable 30-segment time-temperature curves
- Touchscreen multi-segment PID control
- Data logging with Excel export capability
- Built-in over-temperature and thermocouple failure protection
Thermocouple Type N thermocouple
Sealing Method Custom stainless steel vacuum flange with sealing
Furnace Chamber - Double-layer steel shell with dual cooling fans
- Dual-zone vertical open structure for easy tube access
- Alumina refractory fiber lining for energy efficiency
Vacuum Flange Stainless steel vacuum flange with valve
Operating Voltage 220V, 50Hz
Power Rating 6KW (customizable)

Gas Delivery System: 3-Channel Mass Flow Control System

Parameter Specification
Power Supply 220V/50Hz, maximum output 18W

Key Features:

  1. Advanced touchscreen control with data recording

  2. Dual-zone vertical design for optimal thermal management

  3. Complete gas flow control system included

  4. Safety-focused design with multiple protection features

  5. Customizable components for specific research needs

Note: Specifications may be customized based on actual requirements. The system combines precision temperature control with efficient gas delivery for advanced CVD applications.

Parameter Specification
Maximum Pressure 3×10 Pa
Gas Channels Can simultaneously connect 3 gas sources to slightly positive pressure
Flow Meter Mass flow meter (other ranges optional)
Channel A Range 1 SLM
Channel B Range 1 SLM
Channel C Range 1 SLM
Gas Line Pressure -0.1 ~ 0.15 MPa
Accuracy ±1% F.S.
Shut-off Valve Stainless steel
Gas Line Tubing 1/4" stainless steel tube

Vacuum System Components

Component Specification
Vacuum Pump 2L/s vacuum pump with silicone hose for rapid gas exchange in furnace tube
Vacuum Gauge Included (standard configuration)


Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

Primary Application:

This dual-zone sliding-track CVD tube furnace features a rail-guided sliding design, allowing for rapid heating and cooling of materials by horizontally moving the furnace. It can simultaneously connect six gas sources, with precise flow measurement and control via a touchscreen 6-channel mass flow controller (MFC).

This high-temperature CVD system is primarily designed for universities, research institutions, and industrial manufacturers to conduct experiments and production related to chemical vapor deposition (CVD).

Key Features:

  • Sliding-track mechanism for fast thermal cycling

  • Multi-gas compatibility (6 independent channels)

  • Precision flow control with touchscreen MFC interface

  • Versatile applications in research and small-batch production
     

    Parameter Specification
    Furnace Access Mode Swing-open design
    Furnace Movement Rail-guided horizontal sliding for rapid heating/cooling
    Chamber Material Alumina refractory fiber
    Heating Element Aluminum-containing heating wire
    Maximum Temperature 1200°C
    Operating Temperature ≤1100°C
    Heating Rate ≤20°C/min (Recommended: 15°C/min)
    Heating Zones Dual-zone
    Total Zone Length 200mm + 200mm
    Tube Material High-purity quartz
    Tube Diameter 60mm
    Sealing Method - Quick-release flange for material loading
    - Stainless steel vacuum flange with silicone seal
    Control System Multi-segment intelligent PID programming
    Temperature Sensor Type N thermocouple
    Safety Alarms Over-temperature & thermocouple failure alarms
    Power Supply 220V, 50Hz

    Gas Delivery System (KJ-6Z)

    Parameter Specification
    Operating Temperature 5~45°C
    Maximum Pressure 3×10 Pa
    Gas Channels 6 independent gas inputs
    Flow Meter Type Mass flow meter (other ranges available at same cost)
    Channel A Range 0-300 SCCM
    Channel B Range 0-300 SCCM
    Channel C Range 0-300 SCCM
    Channel D Range 0-300 SCCM
    Channel E Range 0-300 SCCM
    Channel F Range 0-300 SCCM
    Line Pressure -0.1~0.15 MPa
    Valves Stainless steel shut-off valves
    Tubing Stainless steel

    Vacuum System

    Component Specification
    Pump System Molecular pump unit with connecting pipes
    Power 220V/50Hz
    Mobility Wheel-mounted base for easy movement
    Ultimate Vacuum 6.67×10³ Pa

    Standard Accessories

  • Quartz furnace tube (1)

  • Vacuum flange set (1)

  • Key Features:

  • Unique sliding mechanism enables rapid thermal cycling

  • Six-channel precision gas control system

  • Research-grade vacuum capability

  • Complete turnkey solution with all necessary accessories

  • Industrial-grade construction with safety protections

  •  
  • Tube stoppers (2)

  • O-ring seals

  • Protective gloves (1 pair)

  • Crucible hook (1)

  • PTFE tubing (3m)

  • Hex keys (2)

  • Operation manual
    Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

    This system is designed for CVD processes, including:

  • Silicon carbide coating

  • Conductivity testing of ceramic substrates

  • 2D material growth

  • Controlled growth of ZnO nanostructures

  • Atmosphere sintering of ceramic capacitors (MLCC)

  • It also serves as a dedicated graphene film growth furnace for graphene preparation. The furnace features a sliding rail base design, allowing manual lateral movement to expose the tube to room temperature for rapid cooling.

    This equipment is particularly suitable for CVD experiments requiring fast heating/cooling rates, making it ideal for:

  • High-efficiency graphene synthesis

  • Other CVD applications demanding rapid thermal cycling

  • Key Advantages:
     Precision temperature control for sensitive material growth
     Unique sliding mechanism enables faster processing
     Versatile applications across advanced material research
     Optimized for both graphene and general CVD processes

    Sliding Rail Tube Furnace Specifications

    Furnace Section

    Parameter Specification
    Furnace Structure Sliding rail design
    Maximum Temperature 1200°C
    Continuous Operating Temperature ≤1100°C
    Heating Rate Up to 20°C/min (Recommended: 10°C/min)
    Heating Zone Length 300mm (Single zone)
    Heating Element Phase-resistant heating wire
    Thermocouple Type K
    Temperature Accuracy ±1°C
    Tube Diameter Options Φ50, Φ60, Φ80
    Tube Material High-purity quartz
    Temperature Controller PID intelligent program control
    Vacuum Flange 304 stainless steel
    - Left flange: Equipped with needle valve + ball valve
    - Right flange: KF25 interface with baffle valve

    Power Supply
    | Input Power | Single-phase 220V, 50Hz, 3KW |

    Vacuum System

    Component Specification
    Rotary Vane Pump with Digital Gauge - Ultimate vacuum: 10³ Torr
    - Tube vacuum: 10² Torr
    - Pumping speed: 4CFM (2L/s, 120L/min)
    - Options: Rotary vane pump/diffusion pump/molecular pump available

    Mass Flow Controller System

    Parameter Specification
    Channels 3-channel high precision MFC
    Flow Range MF1-MF3: 50-1000sccm adjustable
    Features - Mixing chamber at bottom
    - 3 manual stainless steel needle valves

    Important Notes

    Warning Description
    Pressure Limit Tube pressure must not exceed 0.02MPa
    Gas Cylinder Safety Must use pressure reducer (0.01-0.1MPa recommended)
    High Temp Operation Above 1000°C: Maintain atmospheric pressure
    Gas Flow Limit <200SCCM to protect quartz tube
    Quartz Tube Limit Continuous use <1100°C
    Valve Warning Never close both valves during heating

    Certifications
    | ISO Certification | CE Certification |

    Safety Precautions:

  • Do not open the furnace chamber when temperature ≥200°C to prevent personal injury.

  • Tube pressure must never exceed 0.02MPa (absolute pressure) during operation to avoid equipment damage from overpressure.

  • Warning: Failure to follow these precautions may result in:

  • Serious personal injury

  • Equipment damage

  • Safety hazards

  •  
  • When furnace temperature >1000°C, the tube must not be under vacuum - maintain atmospheric pressure inside the tube.

  • Avoid closing both inlet and outlet valves simultaneously during sample heating. If valves must be closed:

    • Continuously monitor pressure gauge readings

    • Immediately open exhaust valve if absolute pressure exceeds 0.02MPa

    • Prevents hazardous situations (tube rupture, flange ejection, etc.)
      Advanced Vertical Pecvd System for High-Quality Thin Film Deposition
      Equipment Application & Features

      This high-temperature CVD tube furnace is designed for chemical vapor deposition (CVD) processes, including:

      Silicon carbide (SiC) coating

      Conductivity testing of ceramic substrates

      Controlled growth of ZnO nanostructures

      Atmosphere sintering of ceramic capacitors (MLCC)

      Primary Users:
      Universities, research institutions, and industrial manufacturers for vapor deposition-related experiments and production.

      Key Specifications:

      Alumina (AlO) furnace tube withstands temperatures up to 1600°C

      Vacuum & atmosphere-capable design

      Heating element: High-performance MoSi (molybdenum disilicide)

      Furnace chamber: Ceramic fiber insulation for excellent thermal uniformity & energy efficiency

      Advantages:
      High temperature stability (±1°C precision)
      Rapid heating/cooling with superior heat retention
      Safe & user-friendly operation
      Versatile for advanced materials research

      Parameter Specification
      Maximum Temperature 1700°C
      Operating Temperature 1600°C
      Display LED Screen
      Tube Diameter 80mm (OD)
      Tube Material Alumina Tube
      Heating Zone Length 220+220+220mm (with gaps between zones)
      Heating Element MoSi (Molybdenum Disilicide)
      Heating Rate 0-5°C/min
      Temperature Control - PID automatic power control via SCR (Silicon Controlled Rectifier), phase-angle firing with current-limiting resistor
      - 30 programmable segments for ramp/soak control
      - Built-in PID auto-tuning with over-temperature & thermocouple failure protection
      - Over-temperature alarm allows unattended operation
      Thermocouples 3 control thermocouples (one per zone, outer tube) + 1 monitoring thermocouple (inner tube)
      Temperature Accuracy ±1°C
      Furnace Structure - Double-layer steel shell with dual cooling fans (surface temp <60°C)
      - Fixed non-openable furnace design
      Vacuum Flange Stainless steel vacuum flange with valve
      Operating Voltage 220V 50Hz
      Maximum Power 6kW

      Gas Delivery System

      Component Specification
      4-Channel Mass Flow Controllers - MFC1: 0-100sccm
      - MFC2: 0-200sccm
      - MFC3: 0-500sccm
      - MFC4: 0-200sccm
      Gas Mixing - Bottom-mounted mixing chamber with liquid release valve
      - 4 manual stainless steel needle valves for gas control

      Vacuum System

      Component Specification
      Vacuum Pump + Gauge Rotary vane pump achieves 10Pa vacuum (cooled state)

      Key Features:

    • Ultra-high temperature capability (1700°C) with MoSi heating elements

    • Precision multi-zone temperature control (±1°C)

    • Programmable 30-segment thermal profiles

    • Complete gas mixing system with 4-channel MFCs

    • Industrial-grade vacuum performance
       

      Safety Precautions:

    • Do not open the furnace chamber when temperature ≥200°C to prevent personal injury.

    • Tube pressure must never exceed 0.02MPa (absolute pressure) during operation to avoid equipment damage from overpressure.

    • Warning: Failure to follow these precautions may result in:

    • Serious personal injury

    • Equipment damage

    • Safety hazards

    •  
    • When furnace temperature >1000°C, the tube must not be under vacuum - maintain atmospheric pressure inside the tube.

    • Avoid closing both inlet and outlet valves simultaneously during sample heating. If valves must be closed:

      • Continuously monitor pressure gauge readings

      • Immediately open exhaust valve if absolute pressure exceeds 0.02MPa

      • Prevents hazardous situations (tube rupture, flange ejection, etc.)
        Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

        Equipment Description

        This system integrates:

      • Gas flow control system

      • Liquid injection system

      • Multi-stage temperature-controlled growth zones

      • Water cooling system

      • CNT Growth Furnace Specifications:

      • Maximum operating temperature: 1400°C (continuously adjustable from 0-1400°C)

      • Vertical thermal field distribution with dual-zone temperature control

      • Top-mounted liquid injection port with flow guide components

      • This CNT/thin-film CVD equipment enables:
         Continuous, uninterrupted growth processes
         Precise thermal management for controlled nanostructure synthesis
         Integrated liquid/gas phase delivery for complex material deposition

      • Carbon nanotube (CNT) synthesis components

        Technical Specifications - Carbon Nanotube/Nanowire CVD Growth Furnace

        Parameter Specification
        Equipment Name Carbon Nanotube/Nanowire CVD Growth Furnace
        Model KJ-T1400V
        Furnace Structure Double-layer shell with air cooling system (surface temp <60°C), inner wall coated with imported alumina coating for high reflectivity and cleanliness
        Maximum Power 20KW
        Voltage AC 220V single-phase, 50/60Hz
        Heating Element Silicon carbide (SiC) rods
        Max Operating Temp 1400°C
        Continuous Working Temp Adjustable between 100-1400°C
        Heating Rate 1-10°C/min
        Furnace Tube Material & Dimensions Alumina tube: OD 80mm × Length 1500mm
        Heating Zone Length 700mm + 400mm
        Uniform Temp Zone Length 800mm (±1°C)
        Thermocouple SEI thermocouple for temperature measurement and control
        Temperature Control System 30-segment PID programmable control
        Temperature Accuracy ±1°C

        Stainless Steel Flange
        The system includes a stainless steel vacuum flange assembly (equipped with stainless steel needle valves and mechanical pressure gauge). The armored flange allows thermocouple extension to the inlet for temperature monitoring.

        Key Features:

      • High-purity alumina tube for contamination-free growth

      • Precision temperature control (±1°C) across 800mm uniform zone

      • Note: All specifications subject to technical verification. Designed for advanced nanomaterial synthesis under controlled atmospheres.

      • Robust SiC heating elements for ultra-high temperature operation

      • Complete gas/vacuum interface with measurement capabilities
        Advanced Vertical Pecvd System for High-Quality Thin Film Deposition

        Equipment Introduction

        The LCD Touchscreen CVD High-Temperature Furnace is a tube furnace specially designed for CVD processes, featuring:

      • Double-layer shell structure with an air-cooling system, keeping the surface temperature below 55°C

      • 30-segment PID programmable intelligent temperature control with phase-angle firing for precise heating

      • Alumina polycrystalline fiber chamber lining for excellent thermal insulation and uniform temperature distribution

      • Applications:
         Silicon carbide (SiC) coating
         Conductivity testing of ceramic substrates
         Controlled growth of ZnO nanostructures
         Atmosphere sintering of ceramic capacitors (MLCC)

        Key Advantages:

      • User-friendly touchscreen interface

      • Energy-efficient thermal design

      • Research-grade temperature uniformity

      • Versatile for advanced material processing

      •  
      • Fully automated operation with unattended capability

        High-Temperature Furnace Specifications

        Parameter Specification
        Furnace Structure Double-layer shell with air cooling system (surface temp <55°C), inner wall coated with imported alumina coating for enhanced reflectivity and cleanliness
        Maximum Power 5KW
        Voltage AC 220V single-phase, 50Hz
        Heating Element Al-doped Fe-Cr-Al alloy (alumina-coated surface for extended lifespan)
        Max Operating Temp 1200°C
        Continuous Working Temp 1100°C
        Heating Rate 1-10°C/min
        Furnace Tube Material & Dimensions Quartz tube: OD 80mm × Length 1000mm
        Heating Zone Length Total 440mm
        Uniform Temp Zone Length 150mm (±1°C)
        Control Interface LCD touch screen
        Thermocouple Type N thermocouple, 3 calibrated thermocouples with real-time display on furnace screen
        Temperature Control 30-segment PID programmable control
        Temperature Accuracy ±1°C
        Vacuum Sealing System Two stainless steel vacuum flanges (pre-installed with vacuum gauge and shut-off valve)
        High Vacuum System - Control panel for molecular pump speed/vacuum level monitoring
        - Turbo molecular pump + dry scroll pump
        - All KF-25 standard connections between pumps and quartz tube
        Vacuum Level 6.7×10³ Pa (empty chamber, room temperature)
        Gas Delivery System Three mass flow controllers with ranges:
        • Channel 1: 1-100 sccm
        • Channel 2: 1-200 sccm
        • Channel 3: 1-500 sccm

        Key Features:

      • Ultra-clean alumina-coated chamber for contamination-sensitive processes

      • Precision 3-zone temperature monitoring (±1°C)

      • Research-grade vacuum capability down to 10³ Pa

      • Complete gas flow control with triple MFC channels

      • Industrial-grade components with extended durability
         

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